ROHM, SEMIKRON deepen ties on silicon carbide inside EV power modules
Recently, ROHM's latest 4th generation of SiC MOSFETs has been confirmed for use in SEMIKRON's 'eMPack' power modules for next-generation electric vehicles. The companies are collaborating for more than ten years on the implementation of silicon carbide (SiC) inside power modules for automotive use.
With the latest development, both the companies are deepening their collaboration by providing optimal power solutions through the fusion of ROHM's device or control technologies and SEMIKRON's module technologies that can optimally combine them.
This complements the fact that SEMIKRON has secured a billion-Euro contract to supply their innovative 'eMPack' power modules to a German car maker, beginning in 2025. The Nuremberg-headquartered company has developed a fully sintered assembly and connection technology 'Direct Pressed Die' (DPD). This enables extremely compact, scalable and reliable traction inverters.
"Thanks to ROHM's SiC technology, SEMIKRON's innovative eMPack®- family of power modules is ready to make a significant contribution to reducing emissions through e-mobility", says Karl-Heinz Gaubatz, CEO and CTO at SEMIKRON. "ROHM's SiC technology provides more efficiency, performance and reliability in automotive and also industrial applications".
SEMIKRON claims that its 'eMPack' module technology has been specially designed for SiC-based converters of medium and high power in order to fully exploit the properties of the new semiconductor material. The company also plans to use ROHM's IGBTs in modules for industrial applications.
ROHM produces SiC components in-house in a vertically integrated manufacturing system. ROHM's production subsidiary SiCrystal, located in Nuremberg, Germany, plans to strongly grow its silicon carbide wafer capacities to produce several 100,000 substrates a year.
"This partnership leads to a competitive solution for inverter application use inside electrical vehicles", says Isao Matsumoto, President and CEO of ROHM.
"We offer a broad portfolio of SiC devices – from chips to packages. As the demand for SiC will continue to grow, ROHM will accelerate further investment and product development based on the technology we have cultivated as a leading SiC manufacturer. In addition, our company will continue to propose solutions and deliver customer support", Isao Matsumoto adds.
The Kyoto-based company has been a prominent player in SiC device technology and products. ROHM's latest 4th generation of SiC MOSFETs provides low ON resistance with improved short-circuit withstand time, according to the company.
These characteristics contribute significantly to extend the driving length and miniaturize the batteries of EVs when they are used in traction inverters. Thus, the company develops advanced, energy-saving SiC devices that reduce environmental impact, it adds.